40 CFR Part 98, Table I-18
Verified against eCFR.gov as of June 20, 2026View official text on eCFR.gov ↗
| Process type | In-situ thermal or in-situ plasma cleaning | Remote plasma cleaning |
|---|---|---|
| Gas | CF4 | C2 F6 | c-C4 F8 | NF3 | SF6 | C3 F8 | CF4 | NF3 |
If manufacturing wafer sizes ≤200 mm AND manufacturing 300 mm (or greater) wafer sizes
| gi | 13 | 9.3 | 4.7 | 14 | 11 | NA | NA | 5.7 |
|---|---|---|---|---|---|---|---|---|
| gCF4,i | NA | 23 | 6.7 | 63 | 8.7 | NA | NA | 58 |
| gC2F6,i | NA | NA | NA | NA | 3.4 | NA | NA | NA |
| gCHF3,i | NA | NA | NA | NA | NA | NA | NA | 0.24 |
| gCH2F2,i | NA | NA | NA | NA | NA | NA | NA | 111 |
| gCH3F,i | NA | NA | NA | NA | NA | NA | NA | 33 |
If manufacturing ≤200 mm OR manufacturing 300 mm (or greater) wafer sizes
| gi (≤ 200 mm wafer size) | 13 | 9.3 | 4.7 | 2.9 | 11 | NA | NA | 1.4 |
|---|---|---|---|---|---|---|---|---|
| gCF4,i (≤200 mm wafer size) | NA | 23 | 6.7 | 110 | 8.7 | NA | NA | 36 |
| gC2F6,i (≤200 mm wafer size) | NA | NA | NA | NA | 3.4 | NA | NA | NA |
| gi (300 mm wafer size) | NA | NA | NA | 26 | NA | NA | NA | 10 |
| gCF4,i (300 mm wafer size) | NA | NA | NA | 17 | NA | NA | NA | 80 |
| gC2F6,i (300 mm wafer size) | NA | NA | NA | NA | NA | NA | NA | NA |
| gCHF3,i (300 mm wafer size) | NA | NA | NA | NA | NA | NA | NA | 0.24 |
| gCH2F2,i (300 mm wafer size) | NA | NA | NA | NA | NA | NA | NA | 111 |
| gCH3F,i (300 mm wafer size) | NA | NA | NA | NA | NA | NA | NA | 33 |
* If you manufacture MEMS or PVs and use semiconductor tools and processes, you may use the corresponding g in this table. For all other tools and processes, a default g of 10 must be used.
[89 FR 31922, Apr. 25, 2024]