40 CFR Table I-16 to Subpart I of Part 98
Default Emission Destruction or Removal Efficiency (DRE) Factors for Electronics Manufacturing
June 9, 2020
Open Table
| Manufacturing type/process type/gas | Default DRE (percent) |
|---|---|
| MEMS, LCDs, and PV Manufacturing | 60 |
| Semiconductor Manufacturing: | |
| Plasma Etch/Wafer Clean Process Type: | |
| CF4 | 75 |
| CH3F | 97 |
| CHF3 | 97 |
| CH2F2 | 97 |
| C2F6 | 97 |
| C3F8 | 97 |
| C4F6 | 97 |
| C4F8 | 97 |
| C5F8 | 97 |
| SF6 | 97 |
| NF3 | 96 |
| All other carbon-based plasma etch/wafer clean fluorinated GHG | 60 |
| Chamber Clean Process Type: | |
| NF3 | 88 |
| All other chamber clean fluorinated GHG | 60 |
| N2O Processes: | |
| CVD and all other N2O-using processes | 60 |
[78 FR 68234, Nov. 13, 2013]
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